ロゴKyushu Institute of TechnolpgyNext Generation Power Electronics Research Center

Focus Areas of Research

Research on Power Supply on Cchip (Power SoC), aimed at realizing ultimate miniaturization of power sources.

   
Concept of PowerSoC(a) and next generation 3D-PowerSoC(b).

Quality assessment techniques for next-generation power semiconductor wafers.

    
Wafer quality measurement setup and the principle of the detection.

Development of ultra-compact current sensor array inspection equipment for power module screening.


Power module screening equipment prototype with current sensor array.

Research and development of next-generation electrical network systems, led by ultra-compact power sources.


Next generation high power density (12W/cc) DC-DC converter.

Research on wireless electricity transmission technologies

Research on wireless electricity transmission technologies
Demonstration of the wireless power transmission through thick insulation material

Research on high-performance silicon power devices to reduce the per unit negawatt cost.

  
  Concept of next generation IGBT and high speed diode.

Real-time monitoring technology improve the reliability of power semiconductor devices.


SAT based real-time monitoring of IGBT module package under power stress test.


Temperature distribution imaging by real-time simulation.

Evaluation Circuit with Small Inverter for Capacitors

実リブル電流での評価を電力価格1/10のインバータで実現
Evaluation by Actual Ripple Current Waveform with 1/10-Power- Rating Small Inverter

実リブル電流での評価を電力価格1/10のインバータで実現

Development of a full-scale power test bed.


Concept of researches with full scale power test bed.


  Full scale power test bed (5kV 100A).

Patent

公開番号公開日発明の名称
特開2012-243918平成24年12月10日半導体装置及びその駆動方法
【国際公開番号】WO 2012/157608 A1 2012年11月22日
【台湾公開番号】201312761 2013年3月16日
特許第5721137号平成27年4月3日半導体装置の短絡保護装置
特開2013-76569平成25年4月25日半導体回路の電流測定装置
特開2013-251338平成25年12月12日高電圧電力用半導体装置
PCT/JP 2013/0649432013年5月29日高電圧絶縁ゲート型電力用半導体装置およびその製造方法
【国際公開番号】WO 2013/180186 A12013年12月5日
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